Biography
Sudhanshu Choudhary has 11 years of post PhD teaching and research experience. He has published more than 80 SCI (ISI) research papers in high impact factor science citation indexed journals. He has also supervised 3 PhD (awarded), 3 PhD (thesis submitted), 2 PhD (ongoing) and 40 Master’s dissertations. He is on the list of panel of experts of several international journals and project funding agencies (SERB-DST) and has refereed many international conferences.
He has a PhD degree from Indian Institute of Technology (IIT) Kanpur, India with electrical and electronics background and specialization in microelectronics, nanoelectronics, Digital electronics, Analog Electronics, Semiconductor Devices and nanoelectronics (molecular electronics), Analog integrated circuit design, Quantum devices and quantum information processing systems. He has a good command on ab-initio simulations using DFT in combination with NEGF and his areas of research have been Molecular Electronics simulations using Density Functional Theory (DFT) in combination with Non Equilibrium Green's Function (NEGF), Carbon Nanotubes and other Nanostructures, Interconnects and Clock Distribution Networks, Microelectronics, VLSI, Semiconductor Devices and Circuits. Besides this he also has an exposure to fabrication and characterization of devices like (Organic Thin Film transistors) OTFT and (Organic Light Emitting Diode) OLED.
He has a solid experience in conducting research and academic activities in the area of VLSI Design and Nanoelectronics through master and doctorate program under the supervision of his PhD thesis supervisor Prof. S. Qureshi, who is a key person in the area of VLSI/EDA field who has developed State-of-the-Art VLSI / EDA Design Laboratory Equipped with Industry Standard Digital and Analog Design Tools at Indian Institute of Technology Kanpur India. He has also administered VLSI Design Laboratory at University of Malaysia, Sarawak, Malaysia. His group in India is responsible for Design and Tape outof first application specific integrated circuit (ASIC) at I. I.T. Kanpur. The taped out chip was fabricated by Euro- practice in Belgium. From the year 2016 to 2022, Sudhanshu was co-chief coordinator of national project on VLSI design activities in India under ministry of communication and information technology Govt. of India. To raise share of India in VLSI Design activity in the world market, his group in India has been promoting VLSI Design activity in the country by offering short courses to teachers and students.
Courses taught at UND:
Spring 2025:
EE321 Electronics-I
EE316 Electric and Magnetic Fields
EECS590 Advanced EE and CS Problems
EE421 Electronics-II
Fall 2024:
EE316 Electric and Magnetic Fields
EE321 Electronics-I
ENGR206 Fundamentals of Electrical Engineering
EECS590 Advanced EE and CS Problems
Spring 2024:
EE101 Introduction to Electrical Engineering
EE316 Electric and Magnetic Fields
EE421 Electronics-II
EE524 ASIC Design (Application Specific Integrated Circuit Design)
Fall 2023:
EE321 Electronics-I
EE313 Linear Electric Circuits
EECS590 Advanced EE and CS Problems
EE101 Introduction to Electrical Engineering
Spring 2023:
EE316 Electric and Magnetic Fields
EE421 Electronics-II
EE524 ASIC Design (Application Specific Integrated Circuit Design)
Courses taught elsewhere:
Digital Integrated Circuit Design (Post Graduate, 9 semesters)
Digital Design with FPGAs and VHDL/Verilog
Analog Electronics (Under Graduate, 2 semesters)
Semiconductor Device and Circuits (Under Graduate, 4 semesters)
Basic Electronics (Undergraduate, 4 semesters)
Digital Logic Design (Undergraduate, 4 semesters)
VLSI Fabrication (Undergraduate, 4 semesters)
CMOS VLSI Circuits Design (Undergraduate, 4 semesters)
Circuit Theory (Undergraduate, 5 semesters)
Microelectronics and VLSI Design (Under Graduate, 2 semesters)
Hardware Description Language Verilog/VHDL (Undergraduate, 4 semesters)
Microprocessor 8085/8086 programming
Computer architecture
Data Structures (Undergraduate, 2 semesters)
C Programming (Undergraduate, 2 semesters)
Operating Systems (Undergraduate, 2 semesters)
Mixed Signal Integrated Circuits (Post Graduate, 4 semesters)
Nanotechnology (Undergraduate, 2 semesters)
Embedded System Software Development (Post Graduate, 4 semesters)
Real Time Systems (Post Graduate, 4 semesters)
Microelectronics; Semiconductor Devices and circuits; VLSI Design; Nanotechnology & Nanoelectronics; Analog and Digital integrated circuit design; Quantum devices and quantum information processing systems, Graphene and Carbon Nano Tube based electronic devices
In past, reported experimental and simulation studies on semiconductor device characteristics of FETs, electronic, magnetic and optical properties of nanomaterials. Quantum Spin transport in magnetic tunnel junctions and optical properties of heterostructures for use in Solar Cells and in Magnetoresistive Random Access Memory (MRAM) have also been investigated. Network on chip for interconnects in Integrated circuits have also been investigated.
Science Citation Indexed-SCI Journal Publications (more than 80):
[1] Highly Reliable, Stable and Store Energy efficient 8T/9T-2D-2MTJ NVSRAMs, S. Tripathi, S. Choudhary and P. K. Misra, IEEE Transactions on Nanotechnology, December 2023. DOI: 10.1109/TNANO.2023.3345304
{SCI Impact Factor: 2.485}
[2] Density functional characterization of electronic and optical properties of strontium titanate under doping and strain for optoelectronic applications, Ashish Raturi, Poornima Mittal, Sudhanshu Choudhary, IEEE Transactions on Nanotechnology, 2023, doi: 10.1109/TNANO.2023.3280083.
{SCI Impact Factor: 2.917}
[3] An 8T PA Attack Resilient NVSRAM for In-Memory-Computing Applications, S. Tripathi, S. Choudhary and P. K. Misra, IEEE Transactions on Circuits and Systems I: Regular Papers, 2023, doi: 10.1109/TCSI.2023.3280193.
{SCI Impact Factor: 4.14}
[4] A Novel STT-SOT MTJ-Based Nonvolatile SRAM for Power Gating Applications, S Tripathi, Sudhanshu Choudhary, PK Misra, IEEE Transactions on Electron Devices, vol. 69, no. 3, pp. 1058-1064, March 2022, doi: 10.1109/TED.2022.3140407.
{SCI Impact Factor: 2.917}
[5] Enhanced Absorption in MoS2/Hg0.33Cd0.66T e Heterostructure for Application in Solar Cell Absorbers, Sudhanshu Choudhary and A Garg, IEEE Transactions on Nanotechnology, Vol. 18, pp. 989 - 994, 2019.
{SCI Impact Factor: 2.485}
[6] Implication of Hydrogenation in Tuning the Magnetoresistance of Graphene based Magnetic Junction, Sudhanshu Choudhary and S Khandate, IEEE Transactions on Nanotechnology, vol. 18, No. 1, pp. 670 - 675, 2019.
{SCI Impact Factor: 2.485}
[7] Thermally Assisted Magneto Resistance and Spin-Filtration in Single Layer MoS2, Sudhanshu Choudhary and S Singla, IEEE Transactions on Nanotechnology, Vol. 18, No. 1, pp. 462-472, 2019.
{SCI Impact Factor: 2.485}
[8] Tuning the optical properties of zinc sulfide (ZnS) Nanotube , G Yadav and Sudhanshu Choudhary, IEEE Transactions on Nanotechnology, 2018, Vol. 17, No. 4, pp. 807-813, 2018.
{SCI Impact Factor: 2.485}
[9] MoS2 / Phosphorene Heterostructure for Optical Absorption in Visible Region, R Kochar and Sudhanshu Choudhary, IEEE Journal of Quantum Electronics , Vol .54 , Issue: 4 , pp. 7000306, Aug. 2018.
{SCI Impact Factor: 1.887}
[10] Engineering the optical and electronic properties of metal adsorbed Ga2SSe Janus monolayer by applying biaxial tensile and compression strain, Sapna Singh, Sudhanshu Choudhary, Optical and Quantum Electronics, vol. 55, no. 7, pp. 634, 2023.
{SCI Impact Factor: 2.084}
[11] Transition metal induced-magnetization in zigzag SiCNTs, Anurag Chauhan, Kapil Sharma, Sudhanshu Choudhary, Journal of Computational Electronics, vol. pp. , 2023.
{SCI Impact Factor: 1.807}
[12] Strain engineering for tuning the electronic and optical properties of lithium niobate for optoelectronic applications, Ashish Raturi, Poornima Mittal, Sudhanshu Choudhary, Solid State Communications, vol. 361, 115074, 2023, https://doi.org/10.1016/j.ssc.2023.115074
{SCI Impact Factor: 1.934}
[13] Effect of alkali metal adsorption over pristine Ga2STe janus monolayer in enhancing the visible region absorption, S Singh and Sudhanshu Choudhary, Micro and Nanostructures, vol. 173, 207463, 2023.
[14] Modulating the optical and electrical properties of MoSe2 (Molybdenum diselenide) and WS2 (Tungsten disulfide) monolayer by the adsorption of halogen (F, Cl, Br, I and At) atoms, Pallavie Tyagi and Sudhanshu Choudhary, Optical and Quantum Electronics, vol. 54, no. 12, pp. 1-16, 2022.
{SCI Impact Factor: 2.084}
[15] Tuning the electronic and optical properties of SrTiO3 for optoelectronic and photocatalytic applications by plasmonic-metal doping: a DFT-computation, A Raturi, P Mittal, S Choudhary, Optical and Quantum Electronics, vol. 54, no. 10, pp. 1-19, 2022.
{SCI Impact Factor: 2.084}
[16] Enhancing the optical absorption of Ga2SeTe Janus monolayer by adsorption of transition metals, S Singh and Sudhanshu Choudhary, The European Physical Journal D, Vol. 76, no. 15, 2022.
{SCI Impact Factor: 1.485}
[17] Enhanced absorption in black phosphorene on adsorption of Li and K for use in energy conversion applications, P Ranjan and Sudhanshu Choudhary, Optical and Quantum Electronics, Vol. 54, No. 143, 2022.
{SCI Impact Factor: 2.084}
[18] Tuning the electronic and optical properties of Ga2SSe janus monolayer by adsorption of metals, Sapna Singh and Sudhanshu Choudhary, Optical and Quantum Electronics Vol. 53, No. 9, pp. 1-13, 2021.
{SCI Impact Factor: 2.084}
[19] Induced magnetization in armchair and Zig-zag CNTs on adsorbing transition metals, Sudhanshu Choudhary, Nipendra Singh and Prabhat Ranjan, Journal of Magnetism and Magnetic Materials , Vol. 538, 168287, 2021.
{SCI Impact Factor: 2.993}
[20] Tuning the electronic and optical properties of molybdenite (MoS2) by adsorption of alkali metals and halogens, P Tyagi, S Choudhary, Optical Materials , Vol. 118, pp. 111248, 2021.
{SCI Impact Factor: 3.080}
[21] Tuning the electronic and optical properties of the sphalerite by adsorbing halogen and alkali metals. M Tyagi, S Choudhary, IET Optoelectronics, 2021.
{SCI Impact Factor: 2.22}
[22] First principles study on copper and iridium co-doped SrTiO 3 for shifting the optical absorption into visible region, MS Bandaru, S Choudhary, SN Applied Sciences , Vol. 2 , pp. 1-8, 2020.
{SCI Impact Factor: }
[23] Enhanced magnetoresistance in hydrogen-and fluorine-passivated zigzag aluminium nitride nano-ribbon, S Choudhary, M Kumar, The European Physical Journal Plus Vol. 135, pp. 1-10, 2020
{SCI Impact Factor: 3.911}
[24] Visible region absorption in TMDs/phosphorene heterostructures for use in solar energy conversion applications, A Maniyar, S Choudhary, RSC Advances , Vol. 10 (53), pp. 31730-31739, 2020.
{SCI Impact Factor: 3.070}
[25] Enhanced Absorption in MoS2/Hg0.33Cd0.66Te Heterostructure for Application in Solar Cell Absorbers, Sudhanshu Choudhary and A Garg, IEEE Transactions on Nanotechnology, Vol. 18, pp. 989-994, 2019.
{SCI Impact Factor: 2.485}
[26] Implication of Hydrogenation in Tuning the Magnetoresistance of Graphene based Magnetic Junction, S Choudhary, S Khandate, IEEE Transactions on Nanotechnology, Vol. 18, pp. 670-75, 2019.
{SCI Impact Factor: 2.485}
[27] Thermally Assisted Magneto Resistance and Spin-Filtration in Single Layer MoS2, S Choudhary, S Singla, IEEE Transactions on Nanotechnology Vol. 18, pp. 467-472, 2019.
{SCI Impact Factor: 2.485}
[28] Understanding the Spin Transport in H2O-Adsorbed CNT-Based Magnetic Tunnel Junction, M Saini, S Choudhary, Journal of Superconductivity and Novel Magnetism, Vol. 32, No. 4, pp. 925-929, 2019.
{SCI Impact Factor: 1.506}
[29] Temperature dependent spin transport investigations in single layer VTe2, V Musle, A Kumar, S Choudhary, Journal of Alloys and Compounds, Vol. 770, pp. 345-349, 2019.
{SCI Impact Factor: 3.779}
[30] Spin pumping in the Heusler alloy heterostructure: Ferromagnetic resonance experiment and theory, S Husain, A Kumar, P Kumar, A Kumar, V Barwal, N Behera, S Choudhary, Physical Review B, Vol. 98 (18), pp. 180404, 2018.
{SCI Impact Factor: 3.836}
[31] Enhanced Magnetoresistance in In-Plane Monolayer MoS2 with CrO2 Electrodes, A Kumar, S Choudhary, Journal of Superconductivity and Novel Magnetism, Vol. 31, No. 10, pp. 3245-3250, 2018.
{SCI Impact Factor: 1.506}
[32] Effects of functionalization of carbon nanotubes on its spin transport properties, S Meena, S Choudhary, Materials Chemistry and Physics, Vol. 217, pp. 175-181, 2018.
{SCI Impact Factor: 2.210}
[33] Study of Effect of Bended Graphene on Its Magnetoresistance and Spin Filtration, AK Singh, S Choudhary, S Meena, Journal of Superconductivity and Novel Magnetism, Vol. 31, No. 9, pp. 2753-27585, 2018.
{SCI Impact Factor: 1.506}
[34] MoS2/Phosphorene Heterostructure for Optical Absorption in Visible Region, R Kochar, S Choudhary, IEEE Journal of Quantum Electronics, Vol. 54, No. 4, pp. 1-6, 2018.
{SCI Impact Factor: 1.887}
[35] Tuning the optical properties of phosphorene by adsorption of alkali metals and halogens, V Musle, S Choudhary, Optical and Quantum Electronics, Vol. 50, No. 7, pp. 1-15, 2018.
{SCI Impact Factor: 2.084}
[36] Tuning the Optical Properties of Zinc Sulfide Nanotube,, G Yadav, S Choudhary, IEEE Transactions on Nanotechnology, Vol. 17, No. 4, pp. 807-813, 2018
{SCI Impact Factor: 2.485}
[37] Spin Transport Investigations in Bilayer Graphene, M Singh, S Choudhary, Journal of Superconductivity and Novel Magnetism, Vol. 31, No. 1, pp. 75-79, 2018.
{SCI Impact Factor: 1.506}
[38] Tuning the tunneling magnetoresistance by using fluorinated graphene in graphene based magnetic junctions, S Meena, S Choudhary, AIP Advances Vol. 7, No. 12, 125008, 2017.
{SCI Impact Factor: 1.568}
[39] Understanding the Effect of Twisting Graphene Sheet on Its Magnetoresistance and Spin Filtration Properties, AK Singh, S Choudhary, S Smith, Journal of Superconductivity and Novel Magnetism, Vol. 30, No. 12, pp. 3497-3501, 2017.
{SCI Impact Factor: 1.506}
[40] Changes in transconductance (gm) and Ion/Ioff with high-K dielectrics in MX2 monolayer 10 nm channel double gate n-MOSFET, SP Kumar, P Sandeep, S Choudhary, Superlattices and Microstructures , Vol. 111, pp. 642-648, 2017.
{SCI Impact Factor: 2.123}
[41] Spin transport in carbon nanotubes bundles: An ab-initio study, S Meena, S Choudhary, Physics Letters A , Vol. 381, No. 39, pp. 3431-3439, 2017.
{SCI Impact Factor: 2.066}
[42] Current saturation and kink effect in zero-bandgap double-gate silicene field-effect transistors, N Patel, S Choudhary, Superlattices and Microstructures , Vol. 110, pp. 155-161, 2017.
{SCI Impact Factor: 2.123}
[43] Effect of twisting and stretching on magneto resistance and spin filtration in CNTs, AK Singh, S Choudhary, Magnetochemistry , Vol. 3, pp. 1-8, No. 3, 2017.
{SCI Impact Factor: 2.193}
[44] First-Principle Study of Effects of Magnesium Oxide Adsorption in SiCNT-Based Magnetic Tunnel Junction, G Choudhary, S Choudhary, Journal of Superconductivity and Novel Magnetism, Vol. 30, No. 8, pp. 2303-2308, 2017.
{SCI Impact Factor: 1.506}
[45] Understanding the Spin Transport in MgO–HfO2 Bilayer Insulating Barrier Magnetic Tunnel Junction, S Choudhary, S Harode, C Dhopte, Journal of Nanoelectronics and Optoelectronics, Vol. 12, No. 7, pp. 661- 665, 2017 ISSN: 1555-1318
{SCI Impact Factor: 0.961}
[46] First principles study on transport characteristics of SiCNT-based field effect transistor, S Choudhary, A Chauhan, International Journal of Electronics Letters, Vol. 5 , No. 2, pp. 246-254, 2017
[47] Improving the subthreshold performance of junctionless transistor using spacer engineering, G Saini, S Choudhary, Microelectronics Journal, Vol. 59, pp. 55-58, 2017.
{SCI Impact Factor: 1.405}
[48] Enhancing TMR and spin-filtration by using out-of-plane graphene insulating barrier in MTJs, S Meena, S Choudhary, Physical Chemistry Chemical Physics, Vol. 19, No. 27, pp. 17765-17772, 2017.
{SCI Impact Factor: 4.449}
[49] Maneesha Singh and Sudhanshu Choudhary, “Spin Transport Investigations in Bilayer Graphene,” J Superconductivity and Novel Magnetism (Springer), vol. , no. , 2017. (accepted)
{SCI Impact Factor: 1.506}
[50] AK Singh, Sudhanshu Choudhary and S Smith, " Understanding the effect of twisting graphene sheet on its magneto resistance and spin filtration properties," J Superconductivity and Novel Magnetism (Springer), vol. , no. , 2017. (accepted)
{SCI Impact Factor: 1.506}
[51] Neeraj and Sudhanshu Choudhary, " Spin Transport in H2O Adsorbed SiCNT Based Magnetic Tunnel Junction Using Half Metallic Ferromagnetic Electrodes," J Nanoengineering and Nanomanufacturing, American Scientific Publishers, USA, vol. , no. , pp. , 2017.
[52] Garima Choudhary and Sudhanshu Choudhary, " First-Principles Study of Effects of Magnesium Oxide Adsorption in SiCNT-Based Magnetic Tunnel Junction," J Superconductivity and Novel Magnetism (Springer), vol. , no. , 2017. DOI: 10.1007/s10948-017-4041-5
{SCI Impact Factor: 1.506}
[53] G. Saini and S. Choudhary, "Improving the subthreshold performance of junctionless transistor using spacer engineering," Microelectronics Journal (Elsevier), vol. 59, pp. 55-58, 2017.
{SCI Impact Factor: 1.405}
[54] G. Saini and S. Choudhary, "Analog/RF performance of source-side only dual-k sidewall spacer trigate junctionless transistor with parametric variations," Superlattices and Microstructures (Elsevier), vol. 100, pp. 757-766, 2016.
{SCI Impact Factor: 2.117}
[55] G. Saini and S. Choudhary, "Improving the performance of SRAMs using asymmetric junctionless accumulation mode (JAM) FinFETs," Microelectronics Journal (Elsevier),vol. 58, pp. 1-8, 2016.
{SCI Impact Factor: 1.405}
[56] Sudhanshu Choudhary, C Dhopte and S Harode, "Understanding the Spin Transport in MgO-HfO2 Bilayer Insulating Barrier Magnetic Tunnel Junction," J Nanoelectronics and Optoelectronics, American Scientific Publishers, USA, vol. , no. , pp. , 2016.
{SCI Impact Factor: 0.961}
[57] A Raturi and Sudhanshu Choudhary, "Simulation study on understanding the Spin Transport in MgO adsorbed Graphene based Magnetic Tunnel Junction," SPIN (World Scientific Publishers), vol. 06, 1650011, 2016.
{SCI Impact Factor: 1.439}
[58] Alok K Singh and Sudhanshu Choudhary, "Understanding the Spin Transport in H2O-Adsorbed GrapheneBased Magnetic Tunnel Junction," J Superconductivity and Novel Magnetism (Springer), vol. , no. , 2016.
{SCI Impact Factor: 1.506}
[59] G. Saini and S. Choudhary, "Investigation of trigate JLT with dual-k sidewall spacers for enhanced analog/RF FOMs," Journal of Computational Electronics (Springer), vol. 15, pp. 865-873, 2016.
{SCI Impact Factor: 1.807}
[60] Sudhanshu Choudhary, Pradeep Mishra and Rohit goyal, "First-Principles Study of Spin Transport in BN Doped CrO2-Graphene-CrO2 Magnetic Tunnel Junction," Physics Letters A (Elsevier), vol. 380, no. 9-10, pp. 1098-1101, 2016.
{SCI Impact Factor: 2.654}
[61] Sudhanshu Choudhary and Abhishek Chauhan, "First principles study on transport characteristics of SiCNTbased field effect transistor," International Journal of Electronics (Taylor and Francis), pp. 1-9, 2016.
{SCI Impact Factor: 0.5}
[62] Sudhanshu Choudhary and Divya Kaushik, "Understanding the Effect of Vacancy Defects on Spin Transport in CrO2-Graphene-CrO2 Magnetic Tunnel Junction," Modern Physics Letters B, (World Scientific Publication), vol. , no., pp. , 2015. (Accepted)
{SCI Impact Factor: 1.224}
[63] Gaurav Saini and Sudhanshu Choudhary, "Asymmetric Dual-k Spacer Trigate FinFET for Enhanced Analog/RF Performance," J Comput Electron, vol. , no., pp. , 2015. (Accepted)
{SCI Impact Factor: 1.807}
[64] Sudhanshu Choudhary and Vikram Singh, "Understanding the Effect of n-type and p-type Doping in the Channel of Graphene Nanoribbon Transistor," Bulletin of Materials Science, vol. , no. , pp. , 2015. (Accepted)
{SCI Impact Factor: 1.841}
[65] Sudhanshu Choudhary and Rohit Goyal, “First-Principles Study of Spin Transport in CrO2-GrapheneCrO2Magnetic Tunnel Junction,” J Supercond Nov Magn, vol. 29, pp. 139-143, 2015.
{SCI Impact Factor: 1.506}
[66] Sudhanshu Choudhary and Devendra Upadhyay, "Understanding the Impact of Graphene Sheet Tailoring on the Conductance of GNRFETs," Bulletin of Materials Science, vol. 38, no. 7, pp. 1705-1709, 2015.
{SCI Impact Factor: 1.841}
[67] Sudhanshu Choudhary and Anurag Chauhan, “First-Principles Study of Spin Transport in CrO2-SiCNTCrO2 Magnetic Tunnel Junction," J Comput Electronics, vol. 14, no. 3, pp. 852-856, 2015.
{SCI Impact Factor: 1.807}
[68] Sudhanshu Choudhary and Mayur Varshney, “First-Principles Study of Spin Transport in CrO2-CNT-CrO2 Magnetic Tunnel Junction,” J Supercond Nov Magn, vol. 28, pp. 3141-3145 , 2015.
{SCI Impact Factor: 1.506}
[69] Sudhanshu Choudhary and Surendra Jalu, " First-principles study of spin transport in Fe–SiCNT–Fe magnetic tunnel junction," Physics Letters A (Elsevier), vol. 379, Issues 28–29, Pages 1661–1665, 2015.
{SCI Impact Factor: 2.654}
[70] Sudhanshu Choudhary, Gaurav Saini and S. Qureshi, " Impact of Radial Compression on the Conductance of Carbon Nanotube Field Effect Transistors,"Modern Physics Letters B, (World Scientific Publication),vol. 28, no.2, pp. 1-9,2014.
{SCI Impact Factor: 1.224}
[71] S. Choudhary and S. Qureshi, “Theoretical Study on the Effect of Dopant Positions and Dopant Density on Transport Properties of a BN Co-Doped SiC nanotube,” Physics Letters A (Elsevier), vol. 377, no. 5, pp. 430- 435, 2013.
{SCI Impact Factor: 2.654}
[72] S. Choudhary and S. Qureshi, “Effect of Moisture on Electron Transport in Si-C Nanotubes: an ab-initio study,” Physics Letters A (Elsevier), vol. 376, no. 45, pp. 3359-3362, 2012.
{SCI Impact Factor: 2.654}
[73] S. Choudhary and S. Qureshi, “Theoretical Study on Transport Properties of a BN Doped SiC nanotube,” Physics Letters A (Elsevier), vol. 375, no. 38, pp. 3382-3385,2011.
{SCI Impact Factor: 2.654}
[74] Sudhanshu Choudhary and S. Qureshi, “Inductance Modelling of SWCNT Bundle Interconnects using Partial Element Equivalent Circuit Method,” Journal of Computational Electronics (Springer), vol. 10, no.1-2, pp. 241-
247, 2011.
{SCI Impact Factor: 1.807}
[75] S. Choudhary and S. Qureshi, “Theoretical Study on The Effect of Radial and Axial Deformation on Electron transport Properties in a Semiconducting Si-C Nanotube,” Bulletin of Material Science, (Springer), vol. 35,
no.5, 2012.
{SCI Impact Factor: 1.841}
[76] Sudhanshu Choudhary and S. Qureshi, "Theoretical Study on the Effect of Vacancy Defect Reconstruction on Electron Transport in Si-C Nanotubes," Modern Physics Letters B, (World Scientific Publication),vol. 25 no. 28, pp. 1-12, 2011.
{SCI Impact Factor: 1.224}
[77] Sudhanshu Choudhary and S. Qureshi, “Power Aware Channel Width Tapering of Serially Connected MOSFETs", Analog Integrated Circuits and Signal Processing (Springer), vol. 70, no. 3, pp. 370 - 383, 2012.
{SCI Impact Factor: 1.337}
[78] Sudhanshu Choudhary and S. Qureshi, “Performance Evaluation for Mesh-based NoCs: Implementation of a New Architecture and Routing Algorithm,” International Journal of Automation and Computing (Springer), vol. 9, no. 3,2012.
{SCI Impact Factor: }
[79] A Raturi, P Mittal and Sudhanshu Choudhary, “Electronic and optical properties of lithium niobate ( LiNbO3 ) under tensile and compressive strain for optoelectronic applications: Insights from DFT-computations,” Materials Science in Semiconductor Processing, vol. 144, no. 3, pp. 106606 (1-10), June 2022.
{SCI Impact Factor: 3.927}
NOTE: Journal impact factor is as available in 2021-22
.
.
International Conference Publications:
[80] POWER AWARE CHANNEL WIDTH TAPERING OF SERIALLY CONNECTED MOSFETS, IEEE-INTERNATONAL CONFERENCE ON MICROELECTRONICS (ICM) CAIRO-EGYPT, PP. 399-402, 2007. DOI: 10.1109/ICM.2007.4497738.
[81] LIFE TIME ISSUES IN ORGANIC LIGHT EMITTING DIODES, IEEE-TENCON 2008 - 2008 IEEE REGION 10 CONFERENCE, 2008, PP. 1-4, DOI: 10.1109/TENCON.2008.4766504
[82] A NEW NOC ARCHITECTURE BASED ON PARTIAL INTERCONNECTION OF MESH NETWORKS, 2011 IEEE SYMPOSIUM ON COMPUTERS & INFORMATICS, 2011, PP. 334-339, DOI: 10.1109/ISCI.2011.5958937
[84] MOISTURE ASSISTED ELECTRON TRANSPORT IN SI-C NANOTUBES: AN AB-INITIO STUDY, NANOTECH SANTA CLARA-CA, 2012, PP. 318-321.
[85] FAULT AWARE ADAPTIVE ROUTING ALGORITHM FOR MESH BASED NOC, IEEE - INTERNATIONAL CONFERENCE ON INVENTIVE COMPUTING AND INFORMATICS (ICICI), 2017, PP. 584-589, DOI: 10.1109/ICICI.2017.8365199
[86] FAULT TOLERANT DYNAMIC XY-YX ROUTING ALGORITHM FOR NETWORK ON-CHIP ARCHITECTURE, 2017 INTERNATIONAL CONFERENCE ON INTELLIGENT COMPUTING AND CONTROL (I2C2), 2017, PP. 1-6, DOI: 10.1109/I2C2.2017.8321939
[87] DESIGN OF FULLY ADAPTIVE ROUTING FOR PARTIALLY INTERCONNECTED CROSS-LINK MESH TOPOLOGY FOR NETWORK ON CHIP, 2017 INTERNATIONAL CONFERENCE ON INTELLIGENT COMPUTING AND CONTROL (I2C2), 2017, PP. 1-6, DOI: 10.1109/I2C2.2017.8321939
[88] PERFORMANCE EVALUATION OF CROSS LINK FULLY ADAPTIVE ROUTING ALGORITHM WITH CROSS LINK ARCHITECTURE FOR NETWORK ON CHIP, 2017 INTERNATIONAL CONFERENCE ON INVENTIVE COMPUTING AND INFORMATICS (ICICI), 2017, PP. 576-583, DOI: 10.1109/ICICI.2017.8365198
[89] Analysis & Comparison of Digital to Analog Converter in Different CMOS Technology, 2018 Second International Conference on Intelligent Computing and Control Systems (ICICCS) 14-15 June 2018 Madurai, India.
[90] A Study of 1.6 V Voltage Regulator from 2.5 V Supply Using 1.8 V Devices In 14-nm FinFET Technology, 2018 International Conference on Emerging Trends and Innovations In Engineering And Technological Research (ICETIETR) 11-13 July 2018 Ernakulam, India.
[91] A Comparison between MOSFET based and CNTFET based Analog to Digital Converter, 2018 International Conference on Recent Innovations in Electrical, Electronics & Communication Engineering (ICRIEECE), 27-28 July 2018, Bhubaneswar, India.
.
.
International Book Chapters:
[92] Impact of Defects and Doping on Electron Transport in SiCNTs, Silicon-based Nanomaterials, vol. 187, pp. 243-264, 2013, Springer New York.
[93] Design and Simulation of CNTFET by Varying the Position of Vacancy Defect in Channel, Intelligent Computing, Communication and Devices, pp. 545-551, 2015, Springer.
- Nominated for an "Outstanding Graduate/Professional Teaching Award-2024" at University of North Dakota
- 2023-2024 CEM Faculty and Staff of the Year award (runner up) at University of North Dakota
PhD: Indian Institute of Technology Kanpur, Electrical Engineering, 2013.
'Simulation studies on understanding the effect of defects, doping and moisture on electronic properties of silicon carbide nanotubes'
Masters: Indian Institute of Information Technology & Management Gwalior, VLSI Design, 2006.
'Algorithms for board level interconnect testing'
Bachelors: Birla Institute of Technology MESRA Ranchi-India, Electronics and Communication Engineering, 2002.
Instructor of ELectrical Engg (Jan 2023 - present) at University of North Dakota-US, School of Electrical Engg and Computer Science.
Assistant Professor (March 2013 – Dec. 2022) at National Institute of Technology Kurukshetra-India, Department of Electronics & Communication Engineering,
Assistant Professor since Dec. 2012 – March 2013) at National Institute of Technology Silchar-India, Department of Electronics & Communication Engineering.
Graduate Teaching Assistant Jan. 2007 – Dec. 2011 at Indian Institute of Technology Kanpur, Department of Electrical Engineering.
My wife Rupa is a science graduate and is a homemaker. My daughter Samriddhi is 11 years young and studies in grade-6. Abhinav is the youngest member of my family, he is my son and he is 2 years young.